BTA60 سری 60A TRIACS

Symbol

Value

Unit

IT(RMS)

60

A

VDRM VRRM

1200/1600

V

V_TM

1.55

V

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

V_DRM

1200/1600

V

Repetitive peak reverse voltage (T =25℃)

V_RRM

1200/1600

V

RMS on-state current

IT(RMS)

60

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

I_TSM

500

A

I2t value for fusing (tp=10ms)

I2t

1250

A2S

Critical rate of rise of on-state current

(I =2×I_GT)

dI/dt

50

A/μS

Peak gate current

I_GM

8

A

Average gate power dissipation

PG(AV)

1

W

Symbol

Test Condition

Quadrant

Value

Unit

I_GT

V =12V R =33Ω

Ⅰ Ⅱ Ⅲ

MAX.

50

mA

V_GT

Ⅰ-Ⅱ-Ⅲ

MAX.

1.3

V

V_GD

V_D=V_DRM Tj=125℃ R=3.3KΩ

Ⅰ-Ⅱ-Ⅲ

MIN.

0.2

V

I_L

I_G=1.2I_GT

Ⅰ-Ⅲ

MAX.

80

mA

II

180

I_H

I_T=100mA

MAX.

80

mA

dV/dt

V_D=2/3V_DRM Gate Open Tj=125℃

MIN.

1000

V/μs

Symbol

Parameter

Value(MAX.)

Unit

V_TM

I_TM =80A tp=380μs

Tj =25℃

1.65

V

I_DRM

VD=VDRM VR=VRRM

Tj =25℃

10

μA

I_RRM

Tj =125℃

5

mA

Symbol

Parameter

Value

Unit

Rth(j-a)

junction to ambient

50

℃/W

Rth(j-c)

Junction to case(AC)

0.8