ترانزیستور NPN مکمل مبدل TO-247 DC-AC

Symbol

Parameter

Value

Unit

NPN

2SDW100

PNP

2SDW200

VCBO

Collector-emitter voltage (IE = 0)

80

V

VCEO

Collector-emitter voltage (IB = 0)

80

V

IC

Collector current

25

A

ICM

Collector peak current (tP < 5 ms)

40

A

IB

Base current

6

A

IBM

Base peak current (tP < 5 ms)

10

A

PTOT

Total dissipation at Tc ≤ 25 °C

130

W

TSTG

Storage temperature

-65 to 150

°C

TJ

Max. operating junction temperature

150

°C

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case max

0.96

°C/W

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCE = 80 V

0.5

mA

ICEV

Collector cut-off current

(VBE = - 0.3 V)

VCE = 80 V

0.1

mA

ICEO

Collector cut-off current

(IB = 0)

VCE = 60 V

0.5

mA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

2

mA

VCEO(sus) (1)

Collector-emitter sustaining voltage (IB = 0)

IC = 50 mA

80

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC = 5 A      IB = 20 mA IC = 10 A    IB = 40 mA IC = 20 A    IB = 80 mA

1.2

1.75

3.5

V V V

VBE(sat)(1)

Base-emitter saturation voltage

C                   B

3.3

V

(1)

Base-emitter voltage

I  = 10 A  V     = 3 V

1

3

V

hFE(1)

DC current gain

IC = 5 A      VCE = 3 V IC = 10 A    VCE = 3 V IC = 20 A    VCE = 3 V

600

500

300

15000

12000

6000

VF(1)

Diode forward voltage

IF = 10 A

TBD

V

Is/b

Second breakdown current

VCE = 25 V   t = 500 ms

TBD

A

Dim.

mm.

Min.

Typ

Max.

A

4.85

5.15

A1

2.20

2.60

b

1.0

1.40

b1

2.0

2.40

b2

3.0

3.40

c

0.40

0.80

D

19.85

20.15

E

15.45

15.75

e

5.45

L

14.20

14.80

L1

3.70

4.30

L2

18.50

øP

3.55

3.65

øR

4.50

5.50

S

5.50