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VRRM (1)

VDRM (1)

VRSM (1)

1200

1200

1300

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

15 mA

70 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

I_T(AV)M

929

A

Sinewave,180^o conduction,T_c=55^oC

RMS value of on-state current

I_T(RMS)m

1893

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

-

9.0

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

405x10³

A²s

8.3 msec

Latching current

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.04

V

I_TM = 1400 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

30

W

Average gate power dissipation

P_G(AV)

2

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

300

mA

V_D = 10 V;I_T=3A;T_j = +25 ^oC

Gate voltage required to trigger all units

V_GT

3.0

V

V_D = 10 V;I_T=3A;T_j = +25 ^oC

Peak negative voltage

V_RGM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_gd

1.0

-

ms

V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C

Turn-on time

t_gt

2.0

-

Turn-off time (with V_R = -5 V)

t_q

-

-

10

ms

I_TM=1000A, t_p=1000us, di/dt=60A/us, V_r=50V, V_dr=33%V_DRM, dV_dr/dt=200V/us

Reverse recovery current

I_rm

-

A

I_TM=4000A, t_p=2000us, di/dt=60A/us