ترانزیستورهای قدرت سیلیکون NPN 13005D

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

I_C

Continuous Collector Current

3

A

Icm

Collector Pulse Current（Tp＜5ms）

6

A

PTOT

Total dissipation at Tcase=25 ℃

TO-126SD

50

W

TO-220

75

T_j

Junction Temperature

150

℃

T_stg

Storage Temperature Range

-55—150

℃

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICBO

Collector Cutoff Current

V_CB= 700 V，IE=0

0.1

mA

ICEO

Base Cutoff Current

V_CE= 400 V，Ic=0

0.1

mA

IEBO

Emitter Cutoff Current

V_EB= 9 V，I_C=0

0.1

mA

VCBO

Collector-Base Breakdown Voltage

I_C= 0.1mA

700

V

VCEO

Collector-Emitter Breakdown Voltage

I_C= 0.1mA

400

V

VEBO

Emitter-Base Breakdown Voltage

I_B= 0.1mA

9

V

hFE

DC Current Gain

I_C= 0.5A,V_CE= 5V

15

35

a

VCE sat

Collector-Base Breakdown Voltage

I_C= 2A,I_B= 0.5A

1

V

a

VBE sat

Base-Emitter Saturation Voltage

I_C= 2A,I_B= 0.5A

1.5

V

ts

Storage Time

UI9600，Ic=0.5A

2

7

us

f_T

Transition Frequency

VCE=10V，IC=0.2A F=1MHz

5

MHz

a：Pulse Test，tp ≤300us，δ≤2%